Capacitive-resistive field computations are carried out around post-type HV insulators of varying
shapes. Thc boundary clcment method (UEM) has bccn employed for clcctric field coinyutations.
Different insulator shapes havc bccn obtained by varying scvcrd parameters, which
definc the shape of the HV insulator contour. For each insulator shape, tlic maximum stress
occurring on the insulator surfacc has been dctcrmined with no surface pollution, uniform
surface pollution and also partial surface pollution. For partial pollution, scvcral cases havc
bccn studied, in which differcnt sections of the insulator surface are pollutcd. Furthennorc,
thc cffect of elcctrode radius on the maximuin stress on insulator surface bas been investigatcd.
The results obtained are presented in this paper in dctail.
Capacitive-resistive field computations are carried out around post-type HV insulators of varyingshapes. Thc boundary clcment method (UEM) has bccn employed for clcctric field coinyutations.Different insulator shapes havc bccn obtained by varying scvcrd parameters, whichdefinc the shape of the HV insulator contour. For each insulator shape, tlic maximum stressoccurring on the insulator surfacc has been dctcrmined with no surface pollution, uniformsurface pollution and also partial surface pollution. For partial pollution, scvcral cases havcbccn studied, in which differcnt sections of the insulator surface are pollutcd. Furthennorc,thc cffect of elcctrode radius on the maximuin stress on insulator surface bas been investigatcd.The results obtained are presented in this paper in dctail.
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Capacitive-resistive Field computations are carried out Around Post-Type HV insulators of varying
Shapes. Thc Boundary Clcment method (UEM) has Bccn employed for Clcctric Field Coinyutations.
Different Shapes insulator Bccn havc obtained by varying Scvcrd Parameters, which
Definc the Shape of the HV insulator Contour. Shape for each insulator, Tlic maximum Stress
has been occurring on the insulator Surfacc Dctcrmined with no surface Pollution, Uniform
surface Pollution and Pollution also partial surface. For partial Pollution, Scvcral Cases havc
Bccn studied, in which Differcnt Sections of the insulator surface are Pollutcd. Furthennorc,
thc Cffect of Elcctrode on the RADIUS Maximuin Stress on insulator surface Bas been Investigatcd.
The results obtained are Presented in this Paper in Dctail.
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Capacitive-resistive field computations are carried out around post-type HV insulators of varying.Shapes. Thc boundary clcment method (UEM) has bccn employed for clcctric field coinyutations.Different insulator shapes HAVC bccn obtained by varying, scvcrd parameters which.Definc the shape of the HV insulator contour. For each, insulator shape tlic maximum stress.Occurring on the insulator surfacc has been dctcrmined with no, surface pollution uniform.Surface pollution and also partial surface pollution. For partial pollution scvcral cases, HAVC.Bccn studied in which, differcnt sections of the insulator surface are, Furthennorc pollutcd.THC cffect of elcctrode radius on the maximuin stress on insulator surface bas been investigatcd.The results obtained are presented in this paper in Dctail.
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