It was suggested that these⇑Corresp

It was suggested that these
⇑
Corresponding author. Tel.: [phone]; fax: [phone].
E-mail address: [e-mail] (Ł. Gelczuk).
http://dx.doi.org/10.1016/j.sse.2014.02.008
0038-1101/ 2014 Elsevier Ltd. All rights reserved.
Solid-State Electronics 94 (2014) 56–60
Contents lists available at ScienceDirect
Solid-State Electronics
journal homepage: www.elsevier.com/locate/sse
 2014 Elsevier Ltd. All rights reserved.
non-ideal characteristics result from localized lower barrier
height areas within a large area diode with higher barrier height
background. These areas are related to discrete structural or
surface defects and imperfections of SiC material

ผลลัพธ์ (อังกฤษ) 2:

It was SUGGESTED that these
⇑
corresponding author. Tel .: [phone]; Fax: [phone].
E-mail address: [e-mail] (Ł. Gelczuk).
Http://dx.doi.org/10.1016/j.sse.2014.02.008
0038-1101 /? Elsevier Ltd. All rights reserved 2,014.
Solid-State Electronics 94 (2 014) 56-60
Contents lists available at ScienceDirect
Solid-State Electronics
Homepage Journal: Www.elsevier.com/locate/sse
? Elsevier Ltd. All rights reserved 2,014.
Ideal characteristics Result from non-localized Lower Barrier
height areas Within a Large Area Barrier height diode with higher
background. These areas are related to discrete structural or
surface defects and imperfections of SiC Material.