The wafers were etched in 30 % KOH

The wafers were etched in 30 % KOH solution in order to remove the surface layers about
10 µm thick damaged by sawing followed by the texturization in the KOH:IPA:H2O solution. After
this process, the monocrystalline Si wafers with (100) surface orientation were covered by
microscopic pyramids with (111) crystallographic planes. In the case of multicrystalline wafers this
method is not very effective because the crystalline grains have different crystallographic orientation
(Fig. 1a) and the effective reflectance in the range 400 – 1100 nm is only 24 %. A very promising
method of texturization of mc-Si is by acid chemical etching in HF:HNO3:H2O solution [3]. This
method is being developed at IMMS. Fig. 1b shows the micrograph of the mc-Si after acid
texturization for 1 minute

ผลลัพธ์ (แอฟริกา) 1:

Die Waters is geëts in 30% KOH Oplossing om die bo-laag oor Verwyder
10 Chemies gekoppel Dik beskadig deur saag, gevolg deur die texturization in die KOH: IPA: H2O oplossing. Na
hierdie proses is die Mono Si Waters met (100) oppervlak geaardheid gedek deur
mikroskopiese Piramides met (111) kristallografiese Planes. In die geval van multi Wafers hierdie
metode is nie baie effektief omdat die kristallyne korrels verskillende kristallografiese oriëntasie
(Fig 1A.) En die effektiewe reflektansie in die Range 400 - NM 1100 is slegs 24%. 'N baie belowende
metode van texturization van MC-Si is deur suur Chemiese ets HF: HNO3: H2O Oplossing [3]. Dit
metode word by se TMB 's ontwikkel. Fig. 1B toon die mikrograaf van die MC-Si na suur
texturization vir 1 minuut.