Our resultsdemonstrate the potentia

Our results
demonstrate the potential of mesoporous SiO2 in improving the
device efficiency in an efficient manner. In order to investigate,
the reasons for the device improvement, we first analysed estimated
photovoltaic parameters. As shown in the figures, the open
circuit voltage (Voc) remains almost unaffected while the short
circuit current density (Jsc) increases gradually with increase in
wt% of mesoporous SiO2. The improvement in JSC is attributable
to enhanced light harvesting on account of incorporation of mesoporous
SiO2. However, FF is maximum upon incorporation of
0.75 wt% of mesoporous SiO2 and this improvement is attributable
to the blocking effect of SiO2. Incorporation of mesoporous SiO2
more than 0.75 wt% results in reduced fill factor, which may be
due to the resistance posed by insulating SiO2. This is also evident
from the dark J–V characteristics of DSSCs which shows increment
in the value of onset potential upon incorporation of mesoporous
SiO2 up to 0.75 wt% and decreases upon further incorporation of
mesoporous SiO2 (Fig. 5(e)). Therefore, the overall highest
efficiency (3.57%) is obtained for 0.75 wt% of mesoporous SiO2
which is an improvement of 50% over the reference cell.

ผลลัพธ์ (แอฟริกา) 1:

Ons resultate
toon die potensiaal van mesoporiën SiO2 in die verbetering van die
doeltreffendheid in 'n doeltreffende wyse apparaat. Met die oog op ondersoek,
die redes vir die verbetering apparaat, ons ontleed Eerste raming
fotovoltaïese parameters. Soos getoon in die syfers, die oop
Circuit Voltage (Voc) bly byna onaangeraak terwyl die kort
Circuit stroomdigtheid (RDK) geleidelik verhoog met toename in
WT% van mesoporiën SiO2. Verbetering in die RDK is toe te skryf
aan Verbeterde Lig oes as gevolg van Oprigting van mesoporiën
SiO2. Maar VF is op Oprigting maksimum van
0,75% van WT verbetering mesoporiën SiO2 en dit is toe te skryf
aan die blokkerende effek van SiO2. Oprigting van mesoporiën SiO2
meer as 0,75% WT resultate in verminderde vul faktor, wat nodig mag wees
as gevolg van die weerstand wat deur Isolasie SiO2. Dit is ook duidelik
uit die J-V eienskappe van Dark DSSCs wat inkrement toon
in die waarde van Oprigting op potensiële aanvang van mesoporiën
SiO2 tot 0,75% en WT af op verdere Oprigting van
mesoporiën SiO2 (Fig. 5 (E)). Daarom is die algehele hoogste
is doeltreffendheid (? 3,57%) behaal 0,75% van WT mesoporiën SiO2
wat 'n verbetering van 50% teenoor die selverwysing.