ทMagnetic oxide thin films can be p

ทMagnetic oxide thin films can be prepared by physical or chemical methods. In
physical deposition methods, a source of material is separated by a distance d from
the substrate, which is often heated in the range 400–1000 ◦C to facilitate growth
[26]. Some variants are indicated in Figure 1.5. At low pressure, the atomic species
from the source arrive at the substrate without collision, but at higher pressure,
they are thermalized by collision with the gas atoms in the chamber. At room
temperature, λ=6/P, where λ is the mean free path of the atom in millimeters
and P is the pressure in pascals. Oxide thin films are used as tunnel barriers,
and as functional elements in thin film stacks (ferromagnetic, antiferromagnetic,
ferroelectric oxides). The methods are now described in more detail. In situ
measurement of the thicknesses of the thin films may be achieved using optical
reflectometry or a quartz crystal monitor.

ผลลัพธ์ (อังกฤษ) 1:

@ Magnetic oxide thin films can be prepared by chemical or physical methods In.physical deposition methods, a source of material is separated by a distance d fromthe substrate, which is often heated in the range 400–1000 ◦C to facilitate growth[26]. Some variants are indicated in Figure 1.5. At low pressure, the atomic speciesfrom the source arrive at the substrate without collision, but at higher pressure,they are thermalized by collision with the gas atoms in the chamber. At roomtemperature, λ=6/P, where λ is the mean free path of the atom in millimetersand P is the pressure in pascals. Oxide thin films are used as tunnel barriers,and as functional elements in thin film stacks (ferromagnetic, antiferromagnetic,ferroelectric oxides). The methods are now described in more detail. In situmeasurement of the thicknesses of the thin films may be achieved using opticalreflectometry or a quartz crystal monitor.

ผลลัพธ์ (อังกฤษ) 2:

The methods are now described in more detail. In situ measurement of the thicknesses of the thin Films May be achieved using Optical Reflectometry or a Quartz Crystal Monitor.

ผลลัพธ์ (อังกฤษ) 3:

The Magnetic oxide thin films can be prepared by physical or chemical methods. In.Physical deposition methods a source, of material is separated by a distance d from.The substrate which is, often heated in the range 400 - 1000 cream C to facilitate growth.[]. Some 26 variants are indicated in Figure 1.5. At low pressure the atomic, species.From the source arrive at the substrate without collision but at higher pressure,,They are thermalized by collision with the gas atoms in the chamber. At room.Temperature λ =, 6 / P where λ, is the mean free path of the atom in millimeters.And P is the pressure in pascals. Oxide thin films are used as, tunnel barriersAnd as functional elements in thin film stacks (ferromagnetic antiferromagnetic,,Ferroelectric oxides). The methods are now described in more detail. In situ.Measurement of the thicknesses of the thin films may be achieved using optical.Reflectometry or a quartz crystal monitor.